“Silicon Carbide can provide an important edge, actually a five% to 10% advancement in array,�?As outlined by Stephan Zizala, The top of Infineon’s automotive high-power answers group. The key benefit of epitaxial graphene growth on silicon carbide more than other tactics is to obtain graphene levels right on the semiconducting https://x.com/hongyuxin20/status/1816463411615502739